520V N-Channel MOSFET

Obsolete

Overview

These N-Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

  • 1.3A, 520V, RDS(on) = 5.3Ω @ VGS = 10 V
  • Low Gate Charge (Typ. 8.3 nC)
  • Low Crss (Typ. 5.5 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability

Tools and Resources

Product services, tools and other useful resources related to SSU1N50B

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

SSU1N50BTU

Loading...

Obsolete

CAD Model

Pb

A

H

P

IPAK-3 / DPAK-3 STRAIGHT LEAD

NA

0

TUBE

5040

N

N-Channel

PowerTrench® T1

DPAK-3

High Voltage

Standard

0

Single

0

520

-

4

4

1.3

-

-

-

-

-

-

-

-

-

-

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.