High Voltage MOSFETs | NTP125N60S5FZ

Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 650 V, 22 A, 125 mΩ, TO-220

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Overview

SUPERFET V MOSFET is ON Semiconductor’s fifth generation high voltage super−junction (SJ) MOSFET family with outstanding low FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. 600 V SUPERET V series provide design benefits by reduced conduction and switching losses while supporting extreme body diode dVDS/dt ratings at 70 V/ns. Consequently, SUPERFET V FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability for soft switching applications such as PSFB and LLC.

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS

  • Ultra Low Gate Charge (Typ. Qg = 39 nC)
  • Low Time Related Output Capacitance (Typ. Coss(tr.) = 520 pF)
  • Optimized Capacitance
  • Excellent body diode performance (low Qrr, robust body diode)
  • 650 V @ TJ = 150 °C
  • Typ. RDS(on) = 100 mΩ
  • 100% Avalanche Tested
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
  • Internal Gate Resistance: 8 Ω

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MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTP125N60S5FZ

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

F

N-Channel

PowerTrench® T1

TO-220-3

High Voltage

Standard

0

Single

0

600

125

20

4.8

22

156

~NA~

~NA~

~NA~

39

2213

~NA~

400

34

3

Price N/A

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