High Voltage MOSFETs | NTMT190N65S3HF

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 20 A, 190 mΩ, Power88

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Overview

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1(MSL 1).Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.

  • Computing
  • Consumer
  • Industrial

  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter

  • 700 V @ TJ = 150 °C
  • Excellent body diode performance (low Qrr, robust body diode)
  • Ultra Low Gate Charge (Typ. Qg = 34 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF)
  • Leadless Ultra-thin SMD package
  • Kelvin Source Configuration
  • Optimized Capacitance
  • Moisture Sensitivity Level 1 guarantee
  • Typ. RDS(on) =159 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

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Channel Polarity

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Package Name

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMT190N65S3HF

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CAD Model

Pb

A

H

P

TDFN4 8.00x8.00x1.00, 2.00P

520AB

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 88

High Voltage

Standard

0

Single

0

650

190

30

5

20

162

~NA~

~NA~

~NA~

34

1610

~NA~

255

30

5

$2.7229

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Reliability Data

Die Related Summary Data

Device: NTMT190N65S3HF

Equivalent to wafer fab process: HVFET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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