High Voltage MOSFETs | NTMT064N65S3H

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 40 A, 64 mΩ, Power88

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Overview

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFETis suitable for various AC/DC power conversion for systemminiaturization and higher efficiency.The Power88 package is an ultra−slim surface−mount package(1 mm high) with a low profile and small footprint (8 x 8 mm2).SUPERFET III MOSFET in a Power88 package offers excellentswitching performance due to lower parasitic source inductance andseparated power and drive sources. Power88 offers MoistureSensitivity Level 1 (MSL 1).

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • LED Lighting
  • UPS / Solar

  • 700V @ TJ = 150C
  • Leadless Ultra-thin SMD package
  • Kelvin Source Configuration
  • Ulta Low Gate Charge (Typ. Qg = 77 nC)
  • Typ. RDS(on) = 56 mohm
  • 100% Avalanche Tested
  • RoHS Compliant
  • Moisture Sensitivity Level 1 guarantee
  • Internal Gate Resistance: 0.7 Ω

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMT064N65S3H

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CAD Model

Pb

A

H

P

TDFN4 8.00x8.00x1.00, 2.00P

520AB

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 88

High Voltage

Standard

0

Single

0

650

64

30

4.2

40

260

~NA~

~NA~

~NA~

77

3860

~NA~

5900

58

8

$4.2381

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Reliability Data

Die Related Summary Data

Device: NTMT064N65S3H

Equivalent to wafer fab process: HVFET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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