High Voltage MOSFETs | NTMT061N60S5F

Power MOSFET, N-Channel,  SUPERFET® V, FRFET®, 600 V, 61 mΩ, 41 A, Power88

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Overview

The SUPERFET V MOSFET FRFET series, optimized reverse recovery performance of body diode, can remove additional component and improve system reliability for soft switching applications such as PSFB and LLC. The Power88 package which is an ultra−slim SMD package offers excellent switching performance by providing kelvin source configuration and lower parasitic source inductance.

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • LED Lighting
  • Solar / UPS

  • 650 V @ TJ = 150 °C
  • Excellent body diode performance (low Qrr, robust body diode)
  • Ultra Low Gate Charge (Typ. Qg = 76 nC)
  • Low Energy Related Output Capacitance (Typ. Coss(er.) = 103 pF)
  • Leadless Ultra-thin SMD package
  • Kelvin Source Configuration
  • Optimized Capacitance
  • Moisture Sensitivity Level 1 guarantee
  • Typ. RDS(on) = 48.8 mΩ
  • 100% Avalanche Tested
  • Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMT061N60S5F

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CAD Model

Pb

A

H

P

TDFN4 8.00x8.00x1.00, 2.00P

520AB

1

260

REEL

3000

F

N-Channel

PowerTrench® T1

Power 88

High Voltage

Standard

0

Single

0

600

61

30

4.8

41

255

~NA~

~NA~

~NA~

76

4175

~NA~

717

63

15

$4.5862

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