Power MOSFET, N-Channel, SUPERFET® III, FRFET®,650 V, 65 A, 40 mΩ, TO-247

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Overview

SUPERFET III MOSFET is onsemi’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS

  • 700 V @ TJ = 150 oC
  • Ultra Low Gate Charge (Typ. Qg = 158 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized Capacitance
  • RoHS Compliant
  • 100% Avalanche Tested
  • Typ. RDS(on) = 32 mΩ

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTHL040N65S3F

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Active

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-247-3

High Voltage

Standard

0

Single

0

650

40

30

5

65

446

-

-

-

158

5940

60

737

140

-

$8.6331

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