High Voltage MOSFETs | NTHL019N60S5F

Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 600 V, 75 A, 19 mΩ, TO-247

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Overview

SUPERFET III MOSFET is onsemi’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS

  • Ultra Low Gate Charge (Typ. Qg = 252 nC)
  • Low Time Related Output Capacitance (Typ. Coss(tr.) = 3174 pF)
  • Optimized Capacitance
  • Excellent body diode performance (low Qrr, robust body diode)
  • 650 V @ TJ = 150 °C
  • Typ. RDS(on) = 15.2 mΩ
  • 100% Avalanche Tested
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
  • Internal Gate Resistance: 3.5 Ω

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTHL019N60S5F

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

F

N-Channel

PowerTrench® T1

TO-247-3

High Voltage

Standard

0

Single

0

600

19

30

4.8

75

568

~NA~

~NA~

~NA~

252

13400

~NA~

1686

190

15

$9.9747

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