High Voltage MOSFETs | NTH027N65S3F

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 75 A, 27.4 mΩ, TO-247

Active

Datasheet

Products

Similar Products

Overview

SUPERFET III MOSFET is onsemi’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS

  • 700 V @ TJ = 150 °C
  • Ultra Low Gate Charge (Typ. Qg = 259 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized Capacitance
  • RoHS Compliant
  • 100% Avalanche Tested
  • Typ. RDS(on) = 23 mΩ

Tools and Resources

Product services, tools and other useful resources related to NTH027N65S3F

CAD Model

CAD Model

Material Composition

Product Change Notification

Reliability Data

Product List

Need a Gate Driver?

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Sort by

Product Groups:

┗

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTH027N65S3F-F155

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-247-3

High Voltage

Standard

0

Single

0

650

27.4

30

5

75

595

-

6

6

259

7690

99

1014

200

-

$12.9812

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.

Reliability Data

Die Related Summary Data

Device: NTH027N65S3F-F155

Equivalent to wafer fab process: 3A

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3A

26

4688824297

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

New Search