Power MOSFET, N-Channel, QFET®, 250 V, 2.3 A, 2.2 Ω, TO-220F

Obsolete

Overview

These N-Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters, switch mode power supply.

  • High Efficiency Switching DC/DC Converters
  • Switched Mode Power Supplies

  • 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.15 A
  • Low Gate Charge (Typ. 4.0 nC)
  • Low Crss (Typ. 4.7 pF)
  • 100% Avalanche Tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQPF3N25

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220FP

High Voltage

Standard

0

Single

0

250

2200

5

5

2.3

27

-

-

-

4

130

2.2

300

30

4.7

Price N/A

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