Power MOSFET, N-Channel, QFET®, 500 V, 13.5 A, 480 mΩ, TO-220F

Obsolete

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

  • 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
  • Low Gate Charge (Typ. 43 nC)
  • Low Crss (Typ. 20 pF)
  • 100% Avalanche Tested

Tools and Resources

Product services, tools and other useful resources related to FQPF13N50C

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQPF13N50C

Loading...

Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220FP

High Voltage

Standard

0

Single

0

500

480

4

4

13

48

-

-

-

43

1580

18.5

4500

180

20

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.