Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220

Obsolete

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

  • 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
  • Low Gate Charge (Typ. 28 nC)
  • Low Crss (Typ. 12 pF)
  • 100% Avalanche Tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQP8N60C

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220

High Voltage

Standard

0

Single

0

600

1200

4

4

7.5

147

-

-

-

28

965

12

3400

105

12

Price N/A

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