High Voltage MOSFETs | FQP6N70

700V N-Channel QFET®

Obsolete

Datasheet

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Overview

These N-Channel enhancement mode power field effect transistors are produced using onsemi's proprietary, planar stripe, DMOS technology. This advanced technology has been expecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

  • 6.2 A, 700V, RDS(on) = 1.5Ω @VGS = 10 V
  • Low gate charge ( typical 30 nC)
  • Low Crss ( typical 15 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQP6N70

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

NA

High Voltage

Standard

0

Single

0

700

1500

±30

5

6.2

142

-

-

-

30

1100

13

2700

125

15

Price N/A

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