Power MOSFET, P-Channel, QFET®, -400 V, -2.0 A, 6.5 Ω, TO-220

Last Shipments

Overview

These P-Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wellsuited for electronic lamp ballast based on complimentary half bridge.

  • Electronic Lamp Ballast based on Complimentary Half Bridge

  • -2.0 A, -400 V, RDS(on) = 6.5 Ω (Max.) @ VGS = -10 V
  • Low Gate Charge (Typ. 10 nC)
  • Low Crss (Typ. 6.5 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQP2P40-F080

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

P-Channel

PowerTrench® T1

TO-220

High Voltage

Standard

0

Single

0

-400

6500

-5

-5

-2

63

-

-

-

10

270

5.5

850

45

6.5

Price N/A

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