Power MOSFET, N-Channel, QFET®, 400 V, 16 A, 270 mΩ, TO-220

Active

Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  • Uninterruptible Power Supply
  • Other Industrial

  • 16A, 400V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 8A
  • Low gate charge ( Typ. 45nC)
  • Low Crss ( Typ. 30pF)
  • 100% avalanche tested

Tools and Resources

Product services, tools and other useful resources related to FQP17N40

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQP17N40

Loading...

Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220

High Voltage

Standard

0

Single

0

400

270

±30

5

16

170

-

-

-

45

1800

21.7

2500

270

30

$1.2528

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.