Power MOSFET, N-Channel, QFET®, 1000 V, 8.0 A, 1.45 Ω, TO-3P

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Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  • Uninterruptible Power Supply
  • Other Industrial

  • 8A, 1000V, RDS(on) = 1.45Ω(Max.) @VGS = 10 V, ID = 4A
  • Low gate charge ( Typ. 53nC)
  • Low Crss ( Typ. 16pF)
  • 100% avalanche tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQA8N100C

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Active

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-3PN

High Voltage

Standard

0

Single

0

1000

1450

±30

5

8

225

-

-

-

53

2475

23

5200

195

16

$2.7111

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