Power MOSFET, N-Channel, QFET®, 500 V, 28.4 A, 160 mΩ, TO-3P

Obsolete

Overview

These N-Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

  • 28.4 A, 500 V, RDS(on) = 160 mΩ (Max.) @ VGS = 10 V, ID = 14.2 A
  • Low Gate Charge (Typ. 110 nC)
  • Low Crss (Typ. 60 pF)
  • 100% Avalanche Tested
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQA28N50

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-3P-3

High Voltage

Standard

0

Single

0

500

160

5

5

28.4

310

-

-

-

110

4300

52

5700

640

60

Price N/A

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