Power MOSFET, N-Channel, QFET®, 500 V, 13.5 A, 480 mΩ, TO-3P

Obsolete

Overview

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

  • High Efficiency Switched Mode Power Supplies
  • Active Power Factor Correction (PFC)
  • Electronic Lamp Ballasts

  • 13.5 A, 500 V
    RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.75 A
  • Low Gate Charge (Typ. 43 nC)
  • Low Crss (Typ. 20 pF)
  • 100% Avalanche Tested
  • Improved dv/dt Capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQA13N50C-F109

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-3P-3

High Voltage

Standard

0

Single

0

500

480

4

4

13.5

218

-

-

-

43

1580

18.5

4500

180

20

Price N/A

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