High Voltage MOSFETs | FDT4N50NZU

Power MOSFET, N-Channel, UniFET II, Ultra FRFET, 500 V, 2 A, 3.0 Ω, SOT223

Active

Datasheet

Products

Similar Products

Overview

UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. UniFET II Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. 

  • Consumer Power Supplies
  • Industrial Power Supplies
  • Lighting / Computing Power Supplies

  • White Goods
  • Pump
  • LED lighting and ballast

  • Excellent body diode reverse recovery performance (lowest trr (Typ. 24 ns) & Qrr (Typ. 18 nC) with excellent softness)
  • Improved dv/dt capability
  • Low gate charge (Typ. 9.1 nC)
  • Low Crss (Typ. 2.7 pF)
  • ESD improved capability with internal zener diode between Gate and Source
  • RDS(on) = 2.42Ω (Typ.) @ VGS = 10V, ID = 1 A
  • RoHS compliant and Solder Pb-free
  • 100% avalanche tested

Tools and Resources

Product services, tools and other useful resources related to FDT4N50NZU

CAD Model

CAD Model

Material Composition

Product Change Notification

Reliability Data

Product List

Need a Gate Driver?

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Sort by

Product Groups:

┗

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT4N50NZU

Loading...

Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

0.0318

1

260

REEL

4000

Y

N-Channel

PowerTrench® T1

SC-4

High Voltage

Standard

0

Single

0

500

3000

25

5.5

2

2

~NA~

~NA~

~NA~

9.1

476

~NA~

18

43

2.7

$0.4486

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.

Reliability Data

Die Related Summary Data

Device: FDT4N50NZU

Equivalent to wafer fab process: HVFET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HVFET

21

40576236131

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

New Search