Power MOSFET, N-Channel, UniFETTM, 500 V, 15 A, 380 mΩ, D2PAK

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Overview

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

  • This product is general usage and suitable for many different applications.
  • Low gate charge Qg results in simple drive requirement ( Typ. 33nC)
  • Improved Gate, avalanche and high reapplied dv/dt ruggedness
  • Reduced RDS(on) ( 330mΩ ( Typ.)@ VGS = 10V, ID = 7.5A)
  • Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 16pF)
  • Improved switching speed with low EMI
  • 175oC rated junction temperature

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB15N50

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK

High Voltage

Standard

0

Single

0

500

380

±30

4

15

300

-

-

-

33

1850

12

5

230

16

$1.8956

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