Name: Power MOSFET, N-Channel, UniFET TM , FRFET ® , 400V, 23A, 190mΩ, TO-3P
Brand: Power MOSFET, N-Channel, UniFET TM , FRFET ® , 400V, 23A, 190mΩ, TO-3P
SKU: FDA24N40F

Power MOSFET, N-Channel, UniFET^TM, FRFET^®, 400V, 23A, 190mΩ, TO-3P

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Overview

UniFET^TM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET^® MOSFET has been enhanced by lifetime control. Its t_rr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

This product is general usage and suitable for many different applications.

R_DS(on) = 150mΩ ( Typ.)@ V_GS = 10V, I_D = 11.5A
Low gate charge ( Typ. 46nC)
Low C_rss ( Typ. 25pF)
100% avalanche tested
RoHS compliant

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_GS Max (V)

V_gs(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Q_gd Typ @ V_GS = 4.5 V (nC)

Q_rr Typ (nC)

C_oss Typ (pF)

C_rss Typ (pF)

Reference Price

FDA24N40F

Active

TO-3P-3L

340BZ

TUBE

450

N-Channel

PowerTrench® T1

TO-3PN

High Voltage

Standard

Single

400

190

±30

235

2280

300

370

$2.0133

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

1676189102

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High Voltage MOSFETs | FDA24N40F

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