Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, IPAK

Last Shipments

Overview

SuperFET® III MOSFET is onsemi’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

  • Computing
  • Consumer
  • Industrial

  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter

  • 700 V @ TJ = 150 °C
  • Ultra Low Gate Charge (Typ. Qg = 18 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
  • Optimized Capacitance
  • Internal Gate Resistance: 1 Ω
  • Typ. RDS(on) = 310 mΩ
  • RoHS Compliant
  • 100% Avalanche Tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCU360N65S3R0

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Last Shipments

CAD Model

Pb

A

H

P

IPAK-3 / DPAK-3 STRAIGHT LEAD

1

245

TUBE

1800

N

N-Channel

PowerTrench® T1

DPAK-3

High Voltage

Standard

0

Single

0

650

360

30

4.5

10

83

-

-

-

18

730

7.6

2400

15

-

Price N/A

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