Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Linghting, ATX power and industrial power applications.

  • RDS(on) = 1.87 Ω (Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 11 nC)
  • Low Eoss (Typ. 1.1 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF)
  • 100% Avalanche Tested
  • RoHS Complian
  • ESD Improved Capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCU2250N80Z

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Last Shipments

CAD Model

Pb

A

H

P

IPAK-3 / DPAK-3 STRAIGHT LEAD

NA

0

TUBE

1800

N

N-Channel

PowerTrench® T1

DPAK-3

High Voltage

Standard

0

Single

0

800

2250

DC: ±20, AC: ±30

4.5

2.6

39

-

-

-

11

440

4.3

2200

16

0.74

Price N/A

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