Power MOSFET, N-Channel, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220F

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

  • AC-DC Power Supplies
  • LED Lighting
  • RDS(on) = 530 mΩ(Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 27 nC)
  • Low Eoss (Typ. 2.8 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCPF650N80Z

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

Y

N-Channel

PowerTrench® T1

TO-220FP

High Voltage

Standard

0

Single

0

800

650

DC: ±20, AC: ±30

4.5

8

30.5

-

-

-

27

1178

11

5900

36

0.84

$1.3902

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