Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 36 A, 90 mΩ, TO-220F

Obsolete

Overview

The SupreMOS MOSFET, the next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

  • RDS(on) = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A
  • Ultra low gate charge ( Typ. Qg = 86nC)
  • Low effective output capacitance
  • 100% avalanche tested
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCPF36N60NT

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220FP

High Voltage

Standard

0

Single

0

600

90

4

4

36

312

-

-

-

86

3595

26.4

10000

149

4

Price N/A

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