Power MOSFET, N-Channel, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F

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Overview

SuperFET®II MOSFET is a brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.

  • This product is general usage and suitable for many different applications.
  • 650V @TJ = 150°C
  • Max. RDS(on) = 199mΩ
  • Ultra low gate charge ( Typ. Qg = 57nC )
  • Low effective output capacitance ( Typ. Coss.eff = 160pF )
  • 100% avalanche tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCPF190N60

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

Y

N-Channel

PowerTrench® T1

TO-220

High Voltage

Standard

0

Single

0

600

199

DC: ±20, AC: ±30

3.5

20.2

39

-

-

-

57

2220

21

5100

1630

85

$1.6135

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