Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 20.2 A, 199mΩ, TO-220

Last Shipments

Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

  • 650 V @TJ = 150°C
  • Max. RDS(on) = 199 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 57 nC)
  • Low Effective Output Capacitance (Typ. Coss.eff = 160 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCP190N60-GF102

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

N-Channel

PowerTrench® T1

TO-220

High Voltage

Standard

0

Single

0

600

199

DC: ±20, AC: ±30

3.5

20.2

208

-

-

-

57

2220

21

3800

1630

85

Price N/A

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