Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-220

Lifetime

Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.

  • Industrial Power Supplies

  • Telecom / Server Power Supplies

  • 650 V @TJ= 150°C
  • Typ. RDS(on) = 102 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 75 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCP125N60E

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Lifetime

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

N-Channel

PowerTrench® T1

TO-220

High Voltage

Standard

0

Single

0

600

125

DC: ±20, AC: ±30

3.5

29

278

-

-

-

75

2250

33

6500

60

17

$2.3384

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