High Voltage MOSFETs | FCMT199N60

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 20.2 A, 199 mΩ, Power88

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as server/telecom power, adaptor and solarinverter applications.
The Power88 package is an ultra-slim surface-mount package (1 mm high) with a low profile and small footprint (8x8 mm2).SuperFET II MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductanceand separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1).

  • Adaptors

  • Server and Telecom Power Supplies
  • Solar Inverters

  • 650 V @ TJ = 150°C
  • RDS(on) = 170 mΩ (Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 57 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCMT199N60

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Active

CAD Model

Pb

A

H

P

PQFN-4

483AP

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 88

High Voltage

Standard

0

Single

0

600

199

DC: ±20, AC: ±30

3.5

20.2

208

-

-

-

57

2043

21

5100

45

7

$2.2165

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Reliability Data

Die Related Summary Data

Device: FCMT199N60

Equivalent to wafer fab process: 3A

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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