Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-247

Obsolete

Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.

  • Industrial Power Supplies

  • Telecom / Server Power Supplies

  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 87 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 88nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCH099N60E

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-247-3

High Voltage

Standard

0

Single

0

600

99

DC: ±20, AC: ±30

3.5

37

357

-

-

-

88

2604

38

7300

75

13.9

Price N/A

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