Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 7.3 A, 620 mΩ, DPAK

Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

  • Industrial Power Applications
  • Solar Inverter / AC-DC Power Supply

  • Flat Panel Display TV Power
  • Server / Telecom Power
  • LCD / LED / PDP TV and Monitor Lighting

  • 650 V @TJ= 150oC
  • Max. RDS(on) = 620mΩ
  • Ultra low gate charge (Typ. Qg = 20nC)
  • Low effective output capacitance (Typ. Coss.eff = 71pF)
  • 100% avalanche tested
  • ESD improved capacity
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCD620N60ZF

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

High Voltage

Standard

0

Single

0

600

620

DC: ±20, AC: ±30

5

7.3

89

-

-

-

20

855

7.7

325

625

30

$0.7223

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