Power MOSFET, N-Channel, SUPREMOS®, FAST, 600V, 25A, 125mΩ, D2PAK

Obsolete

Overview

The SupreMOS® MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

  • This product is general usage and suitable for many different applications.

  • RDS(on) = 81mΩ ( Typ.) @ VGS = 10V, ID = 18A
  • Ultra low gate charge ( Typ. Qg = 86nC )
  • Low effective output capacitance ( Typ. Coss.eff = 361pF )
  • 100% avalanche tested
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCB36N60NTM

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

N-Channel

PowerTrench® T1

D2PAK-3

High Voltage

Standard

0

Single

0

600

125

±30

4

36

312

-

-

-

86

3595

26.4

10000

149

4

Price N/A

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