Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 47 A, 70 mΩ, TO-3P

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Overview

SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

  • This product is general usage and suitable for many different applications.
  • Solar Invertor
  • AC-DC Power Supply
  • Power Factor Correction
  • Switching Power Applications
  • Industrial Power Applications

  • 650V @TJ = 150°C
  • Typ. RDS(on) = 58mΩ
  • Ultra low gate charge ( Typ. Qg = 210nC )
  • Low effective output capacitance ( Typ. Coss.eff = 420pF )
  • 100% avalanche tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCA47N60-F109

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Active

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-3PN

High Voltage

Standard

0

Single

0

600

70

±30

5

47

417

-

-

-

210

5900

110

25000

3200

250

$5.6068

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