Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P

Obsolete

Overview

The SupreMOS® MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

  • This product is general usage and suitable for many different applications.
  • Solar Inverter
  • AC-DC Power Supply
  • Power Factor Correction
  • Industrial Power Application

  • RDS(on) = 80 mΩ ( Typ.) @ VGS = 10 V, ID = 18 A
  • Ultra low gate charge ( Typ. Qg = 86 nC )
  • Low effective output capacitance ( Typ. Coss.eff = 338 pF )
  • 100% avalanche tested
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCA36N60NF

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-3P-3

High Voltage

Standard

0

Single

0

600

95

±30

5

34.9

312

-

-

-

86

3191

36

1300

145

5

Price N/A

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