Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 75 A, 17.9 mΩ, TO-247

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Overview

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • EV Charger
  • Solar / UPS

  • Ultra Low Gate Charge (Typ. Qg = 265 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 322 pF)
  • Fast switching performance with robust body diode
  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 14.3 m Ω
  • 100% Avalanche Tested
  • RoHS Compliant
  • Internal Gate Resistance: 1.07 Ω

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTHL017N60S5H

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

F

N-Channel

PowerTrench® T1

TO-247-3

High Voltage

Standard

0

Single

0

600

17.9

30

4.3

75

625

~NA~

~NA~

~NA~

265

14200

~NA~

11780

191

~NA~

$9.4835

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