High Voltage MOSFETs | NTD360N80S3Z

MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, DPAK

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Overview

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantlyimproves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrialpower supplies.

  • Computing
  • Consumer
  • Industrial

  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV / Audio
  • LED Lighting / Ballast
  • Adapter

  • 900 V @ TJ = 150 °C
  • Ultra Low Gate Charge (Typ. Qg = 25.3 nC)
  • Low Stored Energy in Output Capacitance (Eoss = 2.72 µJ @ 400 V)
  • Optimized Capacitance
  • ESD Improved Capability with Zener Diode
  • Typ. RDS(on) = 300 mΩ
  • RoHS Compliant
  • 100% Avalanche Tested
  • Internal Gate Resistance: 4 Ω

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MSL Temp (°C)

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Channel Polarity

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Package Name

Type

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTD360N80S3Z

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

High Voltage

Standard

0

Single

0

800

360

±30

3.8

13

96

~NA~

~NA~

~NA~

25.3

1143

~NA~

3.2

18.1

~NA~

$1.179

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Reliability Data

Die Related Summary Data

Device: NTD360N80S3Z

Equivalent to wafer fab process: HVFET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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