Power MOSFET, N-Channel, QFET®, 500 V, 2.6 A, 2.7 Ω, IPAK

Obsolete

Overview

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  • Lighting

  • 2.6A, 500V, RDS(on) = 2.7Ω(Max.) @VGS = 10 V, ID = 1.3A
  • Low Gate Charge ( Typ. 10nC)
  • Low Crss ( Typ. 6.0pF)
  • 100% Avalanche Tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQU4N50TU-WS

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Obsolete

CAD Model

Pb

A

H

P

IPAK-3 / DPAK-3 STRAIGHT LEAD

NA

0

TUBE

5040

N

N-Channel

PowerTrench® T1

DPAK-3

High Voltage

Standard

0

Single

0

500

2700

±30

5

2.6

45

-

-

-

10

350

4.7

1150

55

6

Price N/A

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