Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, I2PAK

Lifetime

Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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  • 7.4A, 600V, RDS(on) = 1.0Ω(Max.) @VGS = 10 V, ID = 3.7A
  • Low gate charge ( Typ. 29nC)
  • Low Crss ( Typ. 16pF)
  • 100% avalanche tested
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQI7N60TU

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Lifetime

CAD Model

Pb

A

H

P

I2PAK-3 / D2PAK-3 STRAIGHT LEAD

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

I2PAK-3

High Voltage

Standard

0

Single

0

600

1000

±30

5

7.4

142

-

-

-

29

1100

14.5

2400

135

16

$1.3245

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