P-Channel QFET® MOSFET -250V, -3.1A, 2.1Ω

Last Shipments

Overview

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

  • Lighting

  • -3.1A, -250V, RDS(on) = 2.1Ω(Max.) @VGS = -10 V, ID = -1.55A
  • Low gate charge ( Typ. 10.3nC)
  • Low Crss ( Typ. 10pF)
  • 100% avalanche tested
  • RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to FQD4P25TM_WS

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQD4P25TM-WS

Loading...

Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

TO-252-3

High Voltage

Standard

0

Single

0

-250

2100

±30

-5

-3.1

45

-

-

-

10.3

325

5.2

640

65

10

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

Support on the go

Find and compare products, get support and connect with onsemi sales team.