Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 10 A, 610 mΩ, D2PAK

Obsolete

Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  • Switched Mode Power Supplies
  • Active Power Factor correction (PFC)
  • Electronic Lamp Ballasts

  • 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A
  • Low gate charge ( Typ. 45 nC)
  • Low Crss ( Typ. 17.5 pF)
  • 100% avalanche tested
  • Fast recovery body diode

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQB10N50CFTM-WS

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

N-Channel

PowerTrench® T1

D2PAK-3

High Voltage

Standard

0

Single

0

500

610

4

4

10

143

-

-

-

45

1660

19

220

182

17.5

Price N/A

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