Name: Power MOSFET, N-Channel, SUPERFET ® , Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK
Brand: Power MOSFET, N-Channel, SUPERFET ® , Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK
SKU: FCD4N60

Power MOSFET, N-Channel, SUPERFET^®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK

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Overview

SuperFET^® MOSFET is a first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

This product is general usage and suitable for many different applications.

650V @T_J = 150°C
Typ. R_DS(on) = 1.0Ω
Ultra low gate charge ( Typ. Q_g = 12.8nC )
Low effective output capacitance ( Typ. C_oss.eff = 32pF )
100% avalanche tested
RoHS compliant

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_GS Max (V)

V_gs(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Q_gd Typ @ V_GS = 4.5 V (nC)

Q_rr Typ (nC)

C_oss Typ (pF)

C_rss Typ (pF)

Reference Price

FCD4N60TM

Active

DPAK-3 / TO-252-3

369AS

260

REEL

2500

N-Channel

PowerTrench® T1

DPAK

High Voltage

Standard

Single

600

1200

±30

3.9

12.8

415

7.1

2070

210

19.5

$0.7012

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Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HVFET

40576236131

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High Voltage MOSFETs | FCD4N60

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