Power MOSFET, P-Channel, QFET®, -60 V, -30 A, 26 mΩ, TO-220F

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Overview

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

  • LCD TV
  • Other Audio & Video
  • -30A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -15A
  • Low gate charge ( Typ. 84nC)
  • Low Crss ( Typ. 320pF)
  • 100% avalanche tested
  • 175°C maximum junction temperature rating

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQPF47P06

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

Y

-60

26

P-Channel

Single

±25

-4

-30

62

-

-

-

84

2800

$1.3511

More Details

FQPF47P06YDTU

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

-60

26

P-Channel

Single

±25

-4

-30

62

-

-

-

84

2800

Price N/A

More Details

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