FQPF47P06: Power MOSFET, P-Channel, QFET®, -60 V, -30 A, 26 mΩ, TO-220F

Datasheet: MOSFET – P-Channel, QFET® -60 V, -30 A, 26 mΩ
Rev. 3 (142kB)
Product Overview
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Product Change Notification
This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
 
  • -30A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -15A
  • Low gate charge ( Typ. 84nC)
  • Low Crss ( Typ. 320pF)
  • 100% avalanche tested
  • 175°C maximum junction temperature rating
Applications
  • LCD TV
  • Other Audio & Video
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQPF47P06 Active
Pb-free
FQPF47P06 TO-220-3 FullPak 221AT NA Tube 1000 $1.2634
FQPF47P06YDTU Lifetime
Pb-free
FQPF47P06 TO-220-3 340BJ NA Tube 800 $1.6056
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : <1K
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQPF47P06  
 $1.2634 
Pb
 Active   
P-Channel
Single
-60
±25
-4
-30
62
-
-
26
-
84
2800
TO-220-3 FullPak
Case Outlines
221AT    340BJ   
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