Power MOSFET, P-Channel, QFET®, -150 V, -36 A, 90 mΩ, TO-3P

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Overview

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

  • Other Audio & Video
  • Switched Mode Power Supplies
  • Audio Amplifiers
  • DC Motor Control
  • Variable Switching Power Applications
  • -36A, -150V
    RDS(on) = 90mΩ(Max.) @VGS = -10 V, ID = -18A
  • Low Gate Charge ( Typ. 81nC)
  • Low Crss ( Typ. 110pF)
  • 100% Avalanche Tested
  • 175°C Maximum Junction Temperature Rating

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQA36P15

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Last Shipments

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

-150

90

P-Channel

Single

±30

-4

-36

294

-

-

-

81

2550

Price N/A

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