Power MOSFET, N-Channel, QFET®, 80 V, 160 A, 7 mΩ, TO-3P

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Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe
  • Desktop PC
  • AC-DC Merchant Power Supply - Desktop PC
  • Switched Mode Power Supplies
  • Audio Amplifiers
  • DC Mode Control
  • Variable Switching Power Applications
  • 160A, 80V
    RDS(on) = 7mΩ(Max.) @VGS = 10 V, ID = 80A
  • Low gate charge ( Typ. 220nC)
  • Low Crss ( Typ. 530pF)
  • 100% avalanche tested
  • 175°C maximum junction temperature rating

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ECAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FQA160N08

Lifetime

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

N-Channel

Single

80

±25

4

160

375

-

-

7

-

225

6100

$3.7692

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