N-Channel PowerTrench® MOSFET 100V, 3.2A, 108mΩ

Favorite

Overview

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
  • Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely usedsurface mount package
  • HBM ESD protection level > 3 KV typical (Note 4)
  • 100% UIL tested
  • RoHS Compliant

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDT86106LZ

Loading...

Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

Y

100

108

N-Channel

Single

±20

2.2

3.2

2.2

-

153

-

2.4

234

$0.4692

More Details

Show More

1-25 of 25

Products per page

Jump to :