FDS6898AZ

Dual N-Channel Logic Level PWM Optimized PowerTrench^® MOSFET 20V, 9.4A, 10mΩ

Overview

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications

Infotainment
Portable Navigation
Infotainment
Other
Power Train
Safety and Control
Comfort and Convenience
Body Electronics
Vehicle Security Systems
Other Automotive

Features

9.4 A, 20 V
R_DS(ON) = 14mΩ, @V_GS = 4.5V
R_DS(ON) = 18mΩ, @V_GS = 2.5V
Low gate charge (16 nC typical)
ESD protection diode (note 3)
High performance trench technology for extremelylow R_DS(ON)
High power and current handling capability
Qualified to AEC Q101
RoHS compliant

Material Composition

Product Change Notification

Product List

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS6898AZ-F085

Obsolete

SOIC-8

751EB

260

REEL

2500

N-Channel

Dual

1.5

9.4

Q1=Q2=18

Q1=Q2=14

1821

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDS6898AZ_F085

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 10mΩ

Overview

Product List

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Dual N-Channel Logic Level PWM Optimized PowerTrench^® MOSFET 20V, 9.4A, 10mΩ