FDS6875

Dual P-Channel 2.5V Specified PowerTrench™ MOSFET -20V, -6A, 30mΩ

Overview

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

Applications

This product is general usage and suitable for many different applications.

Features

-6 A, -20 V
R_DS(ON) = 0.030 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.040 Ω @ V_GS = -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low R_DS(ON).
High power and current handling capability.

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS6875

Active

SOIC-8

751EB

260

REEL

2500

-20

P-Channel

Dual

-1.5

-6

Q1=Q2=40

Q1=Q2=30

2250

$0.5209

Product Number:

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MOSFETs | FDS6875

Dual P-Channel 2.5V Specified PowerTrench™ MOSFET -20V, -6A, 30mΩ

Overview

Product List

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