P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

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Overview

This P–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 20mΩ at VGS = –10V, ID = –8.8A
  • Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –6.7A
  • Extended VGSS range (–25V) for battery applications
  • HBM ESD protection level of ±3.8KV typical (note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • Termination is Lead–free and RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS4435BZ

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

-30

20

P-Channel

Single

25

-3

-8.8

2.5

-

35

86

16

1385

$0.2405

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