N-Channel UItraFET Trench® MOSFET 250V, 3.0A, 117mΩ

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Overview

This single N-Channel MOSFET is produced using an advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • Max rDS(on) =117mΩ at VGS =10V, ID = 3.0A
  • Max rDS(on) =126mΩ at VGS = 6V, ID = 2.8A
  • Fast switching speed
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS compliant

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDS2734

Active

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

N-Channel

Single

250

±30

4

3

2.5

-

-

117

-

32

1960

$0.8948

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