MOSFETs | FDP8D5N10C

N-Channel PowerTrench® MOSFET, Shielded Gate, 100V, 76A, 8.5mΩ

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Overview

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • Server
  • Telecom
  • Computing ( ATX, Workstation, Adapter, Industrial Power Supplies etc. )
  • Motor Drive
  • Uninterruptible Power Supplies
  • Solar Inverter
  • Max RDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A
  • High Performance Trench Technology for Extremely Low RDS(on)
  • Extremely Low Reverse Recovery Charge, Qrr
  • Low Gate Charge, QG = 25nC ( Typ.)
  • High Power and Current Handling Capability
  • 100% UIL Tested
  • RoHS Compliant

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDP8D5N10C

Active

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

800

Y

N-Channel

Single

100

20

4

76

107

-

-

8.5

-

25

1765

$1.1845

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